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PDF TSM6968D Data sheet ( Hoja de datos )
| Número de pieza | TSM6968D | |
| Descripción | 20V Dual N-Channel MOSFET w/ESD Protected | |
| Fabricantes | Taiwan Semiconductor Company | |
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TSM6968D
www.DataSheet4U.com
20V Dual N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Drain
2. Source 1
3. Source 1
4. Gate 1
5, Gate 2
6. Source 2
7, Source 2
8. Drain
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
VDS = 20V
RDS (on), Vgs @ 4.5V, Ids @ 6.5A =22mΩ
RDS (on), Vgs @ 2.5V, Ids @ 5.5A =29mΩ
Block Diagram
Ordering Information
Part No.
TSM6968DCA
Packing
Tape & Reel
3,000/per reel
Package
TSSOP-8
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Maximum Power Dissipation
Ta = 25 oC
Ta = 70 oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Symbol
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
Symbol
Rθjf
Rθja
Limit
20V
± 12
6.5
30
1.5
0.96
+150
- 55 to +150
Limit
35
83
Unit
V
V
A
A
W
oC
oC
Unit
oC/W
oC/W
TSM6968D
1-5 2003/12 rev. A
1 page  
TSSOP-8 Mechanical Drawing
www.DataSheet4U.com
TSSOP-8 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 6.20
6.60
0.244
0.260
a 4.30
4.50
0.170
0.177
B 2.90
3.10
0.114
0.122
C 0.65 (typ)
0.025 (typ)
D 0.25
0.30
0.010
0.019
E 1.05
1.20
0.041
0.049
e 0.05
0.15
0.002
0.009
F 0.127
0.005
L 0.50
0.70
0.020
0.028
TSM6968D
5-5 2003/12 rev. A
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSM6968D.PDF ] | |
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