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Número de pieza | TSM802 | |
Descripción | 20V N-Channel MOSFET w/ESD Protected | |
Fabricantes | Taiwan Semiconductor Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM802 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TSM802
20V N-Channel MOSFET w/wEwSw.DDataPShreoett4eU.ccotmed
TDFN 3x3
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
● Low Profile 0.75mm (typ.)
● ESD Protect 2KV
Application
● Specially Designed for Li-on Battery Packs
● Battery Switch Application
Ordering Information
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
25 @ VGS = 4.5V
20 30 @ VGS = 2.5V
65 @ VGS = 1.8V
Block Diagram
Part No.
Package
TSM802CQ RV
TDFN 3x3
TSM802CQ RVG TDFN 3x3
TSM802CQ RK
TDFN 3x3
TSM802CQ RKG TDFN 3x3
Note: “G” denotes for Halogen Free
Packing
3Kpcs / 7” Reel
3Kpcs / 7” Reel
10Kpcs / 13” Reel
10Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
Ta = 25oC
Ta = 75oC
VDS
VGS
ID
IDM
IS
PD
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on 1”x1” FR4 Board, t ≤ 10 sec.
c. Pulse limited <5s @ ID=10A / VGS=10V
Symbol
RθJC
RθJA
N-Channel MOSFET
Limit
20
±12
6
30
1.4
3.1
1.6
+150
-55 to +150
Limit
4.5
48
1/6
ID (A)
5
4
2
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
Version: D08
1 page TSM802
20V N-Channel MOSFET w/wEwSw.DDataPShreoett4eU.ccotmed
TDFN 3x3 Mechanical Drawing
TDFN 3x3 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A
0.65
0.85
0.026
0.034
A1 0.00
0.05
0.000
0.002
A3 0.15
0.25
0.006
0.010
b
0.20
0.30
0.008
0.012
D
2.90
3.10
0.114
0.122
D1 2.20
2.30
0.086
0.090
E
2.90
3.10
0.114
0.122
E2 1.49
1.59
0.058
0.063
e 0.625 0.675 0.025 0.027
K
0.25
0.35
0.010
0.014
L
0.35
0.45
0.014
0.017
H
0.61
0.71
0.024
0.028
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: D08
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TSM802.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM802 | 20V N-Channel MOSFET w/ESD Protected | Taiwan Semiconductor Company |
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