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PDF TSM7N65 Data sheet ( Hoja de datos )

Número de pieza TSM7N65
Descripción 650V N-Channel Power MOSFET
Fabricantes Taiwan Semiconductor Company 
Logotipo Taiwan Semiconductor Company Logotipo



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No Preview Available ! TSM7N65 Hoja de datos, Descripción, Manual

ITO-220
www.DataSheet4U.com
TSM7N65
650V N-Channel Power MOSFET
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)()
650 1.2 @ VGS =10V
ID (A)
3
General Description
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Block Diagram
Low RDS(ON) 1.2(Max.)
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 25pF (Typ.)
Fast Switching
Ordering Information
Part No.
TSM7N65CZ C0
TSM7N65CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Ta = 25ºC
Ta = 100ºC
ID
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
IDM
EAS
Avalanche Current (Repetitive) (Note 1)
IAR
Maximum Power Dissipation @ Tc = 25oC
TO-220
ITO-220
PD
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
TJ
TSTG
N-Channel MOSFET
Limit
650
±30
6.4
3.8
22
216
6
125
30
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
ºC
oC
1/9 Version: A09

1 page




TSM7N65 pdf
Gate Charge Test Circuit & Waveform
www.DataSheet4U.com
TSM7N65
650V N-Channel Power MOSFET
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
5/9 Version: A09

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