|
|
PDF TSM4ND50 Data sheet ( Hoja de datos )
| Número de pieza | TSM4ND50 | |
| Descripción | 500V N-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TSM4ND50 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
TSM4ND50
500V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
TO-252
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
500 2.7 @ VGS =10V
ID (A)
1.5
General Description
The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
● Low gate charge typical @ 12nC
● Low Crss typical @ 10pF
● Fast Switching
● 100% avalanche tested
● Improved dv/dt capability
● ESD Protection
Block Diagram
Ordering Information
Part No.
TSM4ND50CP RO
Package
Packing
TO-252 2,500pcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Peak Diode Recovery (Note 2)
dv/dt
Single Pulse Drain to Source Avalanche Energy (Note 3)
Total Power Dissipation @TC=25oC
Operating Junction and Storage Temperature Range
EAS
PDTOT
TJ, TSTG
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
RӨJC
RӨJA
Limit
500
±30
3
12
3
4.5
120
45
-55 to +150
Limit
2.78
100
Unit
V
V
A
A
A
V/ns
mJ
W
oC
Unit
oC/W
oC/W
1/8 Version: B08
1 page  
TSM4ND50
500V N-Channel Pwowww.eDartaMSheOet4SU.cFomET
Unclamped Inductive Load Test Circuit and Waveform
Switching Time Test Circuits for Resistive Load
Gate Charge Test Circuit
5/8 Version: B08
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TSM4ND50.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TSM4ND50 | 500V N-Channel Power MOSFET | Taiwan Semiconductor Company |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |