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PDF STTH4R02 Data sheet ( Hoja de datos )
| Número de pieza | STTH4R02 | |
| Descripción | Ultrafast recovery diode | |
| Fabricantes | STMicroelectronics | |
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STTH4R02
Ultrafast recovery diode
Main product characteristics
IF(AV)
VRRM
Tj (max)
VF (typ)
trr (typ)
4A
200 V
175° C
0.76 V
16 ns
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH4R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, DPAK,
SMB, SMC, and DO-201AB, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection.
A
K
A
K
TO-220AC
STTH4R02D
K
A
K
TO-220FPAC
STTH4R02FP
K
A
NC
DPAK
STTH4R02B
A
K DO-201AB
STTH4R02
A
K
SMB
STTH4R02U
A
K
SMC
STTH4R02S
Order codes
Part Number
STTH4R02D
STTH4R02FP
STTH4R02B
STTH4R02B-TR
STTH4R02U
STTH4R02
STTH4R02RL
STTH4R02S
Marking
STTH4R02
STTH4R02
STTH4R02
STTH4R02
4R2U
STTH4R02
STTH4R02
4R2S
October 2006
Rev 2
www.st.com
1/13
13
1 page  
STTH4R02
wwCwh.DaaratacStheereist4tUic.csom
Figure 9.
Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
100
F=1MHz
Vosc=30mVRMS
Tj=25°C
10
1
VR(V)
10 100 1000
Figure 10. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
120
IF=4A
VR=160V
100
80
Tj=125°C
60
40
20
0
0
Tj=25°C
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 11. Reverse recovery time versus dIF/dt Figure 12. Peak reverse recovery current
(typical values)
versus dIF/dt (typical values)
tRR(ns)
80
70
60
50
40
30
20
10
0
10
IF=4A
VR=160V
Tj=125°C
Tj=25°C
100
dIF/dt(A/µs)
1000
IRM(A)
10
IF=4A
VR=160V
8
6
Tj=125°C
4
Tj=25°C
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Figure 13. Dynamic parameters versus
junction temperature
QRR; IRM [Tj] / QRR; IRM [Tj=125°C]
1.4
IF=4A
1.2 VR=160V
1.0
0.8 IRM
0.6
QRR
0.4
0.2
0.0
25 50 75
100
Tj(°C)
125
150
Figure 14.
Thermal resistance, junction to
ambient, versus copper surface
under tab - DPAK (Epoxy printed
circuit board FR4, eCU = 35 µm)
Rth(j-a)(°C/W)
100
90
DPAK
80
70
60
50
40
30
20
10
0
0
SCU(cm²)
5 10 15 20 25 30 35 40
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5 Page 
STTH4R02
Pacwkwawge.DiantafoShrmeeat4tiUo.cnom
Table 9. SMC dimensions
Ref.
E1
A1
D A2
b
Ec
E
A1 E1
C
E2 L
A2 b E2
D
L
Figure 20. SMC footprint (dimensions in mm)
Dimensions
Millimeters
Inches
Min.
1.90
0.05
2.90
0.15
7.75
6.60
4.40
5.55
0.75
Max.
2.45
0.20
3.2
0.41
8.15
7.15
4.70
6.25
1.60
Min.
0.075
0.002
0.114
0.006
0.305
0.260
0.173
0.218
0.030
Max.
0.096
0.008
0.126
0.016
0.321
0.281
0.185
0.246
0.063
2.20 4.25 2.20
3.30
8.65
Table 10. DO-201AB Dimensions
DIMENSIONS
B AB
REF. Millimeters
Inches
ØD
ØC
Min. Max. Min. Max.
A 8.5 9.5 0.335 0.374
B 25.4
1
Ø C 4.8 5.3 0.189 0.209
Ø D 0.96 1.06 0.038 0.042
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
11/13
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