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PDF STT2604 Data sheet ( Hoja de datos )
| Número de pieza | STT2604 | |
| Descripción | N-Channel Enhancement Mode Power MosFET | |
| Fabricantes | SeCoS Halbleitertechnologie GmbH | |
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Elektronische Bauelemente
STT2604
5.5A, 30V,RDS(ON) 45m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2604 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2604 is universally used for all commercial-industrial applications.
Features
* Lower Gate Charge
* Fast Switching Characteristic
* Small Footprint & Low Profile Package
D
G
Date Code
DDS
6 54
2604
S 123
DDG
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
www.DataSheet4U.com
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current,VGS@4.5V
3
Continuous Drain Current,VGS@4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TC=25oC
ID@TC=70oC
IDM
PD@TC=25oC
Tj, Tstg
Ratings
30
± 20
5.5
4.4
20
2
0.016
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-case3
Max.
Symbol
Rthj-c
Ratings
62.5
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet STT2604.PDF ] | |
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