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PDF SKM300GA123D Data sheet ( Hoja de datos )
| Número de pieza | SKM300GA123D | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron | |
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Inverse Diode
IF= – IC
Tcase = 25/80 °C
IFM= – ICM Tcase = 25/80 °C; tp = 1 ms
IFSM tp = 10 ms; sin.; Tj = 150 °C
I2t tp = 10 ms; Tj = 150 °C
Values
1200
1200
300 / 220
600 / 440
± 20
1660
– 40 . . .+150 (125)
2 500 7)
Class F
40/125/56
300 / 200
600 / 440
2200
24200
Units
V
V
A
A
V
W
°C
V
A
A
A
A2s
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 3 mA
VGE = VCE, IC = 8 mA
VGE
VCE
=
=
0
VCES
Tj
Tj
=
=
25
125
°C
°C
VGE = 20 V, VCE = 0
IC
IC
=
=
200
300
A
A
VGE
Tj =
= 15 V;
25 (125)
°C
VCE = 20 V, IC = 200 A
CCHC
Cies
Coes
Cres
LCE
VGE = 0
VCE = 25 V
f = 1 MHz
www.DtttEEtdrdfaoo((ootnfafnffS))55))heet4U.comVVIRTCjCGG==CEon=12==206+50R01°0AG5Co,VVffin,=d-1.45l,o7VaΩ3d)
Inverse Diode 8)
VF = VEC
VF = VEC
IF
IF
=
=
200
300
A
A
VGE
Tj =
= 0 V;
25 (125)
°C
VTO Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 200 A; Tj = 25 (125) °C2)
IF = 200 A; Tj = 25 (125) °C2)
Thermal Characteristics
Rthjc
per IGBT
Rthjc
per diode D
Rthch
per module
min.
≥ VCES
4,5
–
–
–
–
–
110
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,4
18
–
2,5(3,1)
3,0(3,8)
–
1300
15
2
1,0
–
250
90
550
70
26
22
max.
–
6,5
4
–
1
3(3,7)
–
–
1500
19
2,6
1,3
20
400
160
700
100
–
–
– 2,0(1,8) 2,5
– 2,25(2,1) –
– – 1,2
– 3 5,5
– 80(120) –
– 11(29) –
– – 0,075
– – 0,15
– – 0,038
Units
V
V
mA
mA
µA
V
V
S
pF
nF
nF
nF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
SEMITRANS® M
IGBT Modules
SKM 300 GA 123 D
SEMITRANS 4
GA
Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL
diodes8)
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (12 mm) and
creepage distances (20 mm).
Typical Applications: → B 6-167
• Switching (not for linear use)
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
– diF/dt = 2000 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... -15 V
5) See fig. 2 + 3; RGoff = 4,7 Ω
7) Visol = 4000 Vrms on request
8) CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data → B6-168
SEMITRANS 4
© by SEMIKRON
0898
B 6 – 163
1 page  
www.DataSheet4U.com
© by SEMIKRON
0898
B 6 – 167
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SKM300GA123D.PDF ] | |
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