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PDF FDZ371PZ Data sheet ( Hoja de datos )
| Número de pieza | FDZ371PZ | |
| Descripción | Thin WL-CSP MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2009
FDZ371PZ
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -3.7 A, 75 mΩ
tm
Features
Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A
Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A
Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A
Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A
Occupies only 1.0 mm2 of PCB area.Less than 30% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted to
PCB
HBM ESD protection level >4.4kV typical (Note 3)
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ371PZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
Battery management
Load switch
Battery protection
S
DS
G
Pin 1
Pin 1
BOTTOM
TOP
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3.7
-12
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
K
Device
FDZ371PZ
Package
WL-CSP 1.0X1.0 Thin
www.DataSheet4U.com
(Note 1a)
(Note 1b)
75
260
Reel Size
7”
Tape Width
8 mm
°C/W
Quantity
5000 units
©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
10-3
PDM
SINGLE PULSE
RθJA = 260 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
102
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
103
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDZ371PZ.PDF ] | |
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