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Número de pieza | SI1056X | |
Descripción | N-Channel 20-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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No Preview Available ! N-Channel 20 V (D-S) MOSFET
Si1056X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.089 at VGS = 4.5 V
20 0.098 at VGS = 2.5 V
0.121 at VGS = 1.8 V
ID (A)
1.32
1.26
1.13
Qg (Typ.)
5.2
SC-89 (6-LEADS)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
D1
D2
G3
6D
5D
4S
Marking Code
S XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1056X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
±8
1.32b, c
1.05b, c
6
8
3.2
0.2b, c
0.236b, c
0.151b, c
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 5 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Symbol
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 73895
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
1
1 page Si1056X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Notes:
PDM
0.001
Single Pulse
0.0001
10-4
10-3
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 540 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73895.
Document Number: 73895
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SI1056X.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI1056X | N-Channel 20-V (D-S) MOSFET | Vishay Siliconix |
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