PDF Si5920DC Data sheet ( Hoja de datos )

Número de pieza	Si5920DC
Descripción	Dual N-Channel 1.5-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! New Product Si5920DC Vishay Siliconix Dual N-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.032 at VGS = 4.5 V 0.036 at VGS = 2.5 V 8 0.045 at VGS = 1.8 V 0.054 at VGS = 1.5 V ID (A) 4a 4a 4a 4a Qg (Typ) 7.3 nC 1206-8 ChipFET® (Dual) 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code CD XXX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5920DC-T1-E3 (Lead (Pb)-free) FEATURES • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra -low on-resistance in compact, thermally enhanced ChipFET® package APPLICATIONS RoHS COMPLIANT • Load switch for portable applications - Guaranteed operation at VGS = 1.5 V critical for opti mized design and space savings D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID www.DataSPhuelseetd4UD.rcaoinmCurrent TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C IS Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 8 ±5 4a 4a 4a 4a 25 2.6 1.7c 3.12 2.0 2.04b, c 1.3b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State RthJA RthJF 50 30 60 °C/W 40 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 1 1 page New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 4 Si5920DC Vishay Siliconix 8 6 Package Limited 4 2 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 2 1 Duty Cycle = 0.5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating 0.2 0.1 0.1 0.05 0.02 0.01 10-4 www.DataSheet4U.com Single Pulse 10-3 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 100 600 *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73490 S-70914-Rev. C, 07-May-07 www.vishay.com 5 5 Page

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