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Número de pieza | SIF912EDZ | |
Descripción | Bi-Directional N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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SiF912EDZ
Vishay Siliconix
Bi-Directional N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.019 @ VGS = 4.5 V
30 0.0195 @ VGS = 4.0 V
0.022 @ VGS = 3.1 V
0.027 @ VGS = 2.5 V
ID (A)
10.7
10.5
9.9
9.0
FEATURES
D TrenchFETr Power MOSFET: 2.5-V Rated
D ESD Protected: 3000 V
APPLICATIONS
D Battery Protection Circuitry
D 1-Cell Li-Ion Battery Pack
− LiB/LiP
− Lithium-Polymer
PowerPAKr 2 x 5
6
S2 5
S2
G2
4
1
S1
2
S1
3 G1
Ordering Information: SiF912EDZ-T1—E3
2.6 kW
G1
D1
2.6 kW
G2
Marking Code
MCXYZ
MC: Part # Code
XYZ: Lot Traceability and Date Code
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
"12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (VGS = 8 V)
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
10.7
7.4
7.7 5.3
80
2.9 1.3
3.5 1.6
1.8 0.86
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
30
61
4.5
Maximum
36
76
5.6
Unit
_C/W
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SiF912EDZ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Normalized Thermal Transient Impedance, Junction-to-Foot
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72952.
Document Number: 72952
S-50131—Rev. B, 24-Jan-05
www.vishay.com
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5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SIF912EDZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
SIF912EDZ | Bi-Directional N-Channel 30-V (D-S) MOSFET | Vishay Siliconix |
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