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PDF STB42N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STB42N65M5 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STx42N65M5
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET
in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
Features
Type
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
VDSS @
TJmax
710 V
710 V
710 V
710 V
710 V
RDS(on)
max
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
ID
33 A
33 A (1)
33 A
33 A
33 A
1. Limited only by maximum temperature allowed
■ TO-220 worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Application
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
■ Switching applications
Description
'
MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes
Marking
3
!-V
Package
Packaging
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Tape and reel
Tube
Tube
Tube
Tube
June 2009
Doc ID 15317 Rev 3
1/18
www.st.com
18
1 page  
www.DataSShTeext44U2.Nco6m5M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min.
-
Typ.
61
24
65
13
Max Unit
ns
ns
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 33 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 24)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 24)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
33 A
132 A
1.5 V
400 ns
7 µC
35 A
532 ns
10 µC
38 A
Doc ID 15317 Rev 3
5/18
5 Page 
www.DataSShTeext44U2.Nco6m5M5
Dim
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
TO-220 mechanical data
Min
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ
1.27
16.40
28.90
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Min
0.173
0.024
0.044
0.019
0.6
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
Typ
0.050
0.645
1.137
Max
0.181
0.034
0.066
0.027
0.62
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Doc ID 15317 Rev 3
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STB42N65M5.PDF ] | |
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