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FDS4897C の電気的特性と機能

FDS4897CのメーカーはFairchild Semiconductorです、この部品の機能は「Dual N & P-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS4897C
部品説明 Dual N & P-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS4897C Datasheet, FDS4897C PDF,ピン配置, 機能
www.DataSheet4U.com
November 2005
FDS4897C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
Inverter
Power Supplies
Features
Q1: N-Channel
6.2A, 40V
RDS(on) = 29mΩ @ VGS = 10V
RDS(on) = 36mΩ @ VGS = 4.5V
Q2: P-Channel
–4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V
RDS(on) = 63mΩ @ VGS = –4.5V
High power handling capability in a widely used
surface mount package
RoHS compliant
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4897C
FDS4897C
13”
©2005 Fairchild Semiconductor Corporation
FDS4897C Rev C(W)
Q1 Q2
40 40
±20 ±20
6.2 –4.4
20 –20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
40
Tape width
12mm
°C/W
°C/W
Quantity
2500 units
www.fairchildsemi.com

1 Page





FDS4897C pdf, ピン配列
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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
Q1
VDD = 20 V,
VGS = 10V,
ID = 1 A,
RGEN = 6 Ω
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Q2
VDD = –20 V, ID = –1 A,
VGS = –10V, RGEN = 6 Ω
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1
VDS = 20 V, ID = 6.2 A, VGS = 10 V
Q2
VDS = –20 V, ID = –4.4 A,VGS =–10 V
Drain–Source Diode Characteristics
VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
(Note 2)
Voltage
VGS = 0 V, IS = –1.3 A
(Note 2)
trr Diode Reverse Recovery Q1
Time
IF = 6.2 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Q2
Charge
IF = –4.4 A, diF/dt = 100 A/µs
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9 18
12 22
5 10
15 27
23 37
45 72
36
18 32
14 20
20 28
2.4
3
2.8
4
ns
ns
ns
ns
nC
nC
nC
0.7 1.2
–0.7 –1.2
17
24
7
12
V
ns
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS4897C Rev C(W)
www.fairchildsemi.com


3Pages


FDS4897C 電子部品, 半導体
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Typical Characteristics: Q2 (P-Channel)
30
VGS = -10V
25
20
-6.0V
-4.5V
-4.0V
15 -3.5V
10
-3.0V
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On-Region Characteristics.
2.6
2.4
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-6.0V
1.2
-10V
1
0.8
0
5 10 15 20 25
-ID, DRAIN CURRENT (A)
30
Figure 14. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.5 ID = -4.4A
VGS = - 10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 15. On-Resistance Variation with
Temperature.
0.14
ID = -2.2A
0.12
0.1
0.08
TA = 125oC
0.06
0.04
TA = 25oC
0.02
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 16. On-Resistance Variation with
Gate-to-Source Voltage.
25
VDS = -10V
20
15
TA = -55oC
25oC
125oC
10
5
0
1.5
2 2.5 3 3.5 4
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 17. Transfer Characteristics.
Figure 18. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4897C Rev C(W)
www.fairchildsemi.com

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部品番号部品説明メーカ
FDS4897AC

MOSFET ( Transistor )

Fairchild Semiconductor
Fairchild Semiconductor
FDS4897C

Dual N & P-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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