|
|
Número de pieza | EIC1314-2 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EIC1314-2 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! www.DataSheet4U.com
UPDATED 08/20/2007
EIC1314-2
13.75-14.50GHz 2-Watt Internally-Matched Power FET
FEATURES
• 13.75 –14.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +33.5 dBm Output Power at 1dB Compression
• 6.5 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• -42 dBc IM3 at Po = 22.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 550mA
f = 13.75-14.50GHz
Drain Current at 1dB Compression f = 13.75-14.50GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 14.50GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 10 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
32.5
5.5
TYP
33.5
6.5
30
600
MAX
UNITS
dBm
dB
±0.6
dB
%
700 mA
-38 -42
dBc
1040
-2.5
11
1440
-4.0
12
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFD
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
24mA
Igr Reverse Gate Current
-4.8mA
Pin Input Power 33.0dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175C
-65C to +175C
12.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised October 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIC1314-2.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC1314-12 | Internally Matched Power FET | Excelics Semiconductor |
EIC1314-2 | Internally Matched Power FET | Excelics Semiconductor |
EIC1314-4 | Internally Matched Power FET | Excelics Semiconductor |
EIC1314-7 | Internally Matched Power FET | Excelics Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |