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STU10NM60NのメーカーはST Microelectronicsです、この部品の機能は「Power MOSFETs」です。 |
部品番号 | STU10NM60N |
| |
部品説明 | Power MOSFETs | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTU10NM60Nダウンロード(pdfファイル)リンクがあります。 Total 28 pages
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%
DPAK
7$%
TO-220
TO-220FP
7$%
IPAK
Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55 Ω
ID PTOT
10 A
70 W
25 W
70 W
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Figure 1. Internal schematic diagram
Applications
'7$%
• Switching applications
Description
*
6
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
1/28
www.st.com
1 Page STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
VGS
ID
ID
IDM(2)
PTOT
dv/dt(3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
10
5
32
70
± 25
10 (1)
5 (1)
32 (1)
25
15
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t =1 s; TC = 25 °C)
Operating junction temperature
Storage temperature
2500
- 55 to 150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
10
5
32
70
V
A
A
A
W
V/ns
V
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
Rthj-case
Rthj-amb
Rthj-pcb
Thermal resistance junction-case max.
Thermal resistance junction-ambient max.
Thermal resistance junction-pcb max.
1.79 5
62.50
1.79
100
50
°C/W
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
4
200
Unit
A
mJ
DocID028726 Rev 1
3/28
28
3Pages Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220
,' $0Y
$
Figure 3. Thermal impedance for TO-220
V
V
V
7M &
7F &
6LQJOH
SXOVH
PV
PV
9'69
Figure 4. Safe operating area for TO-220FP
,' $0Y
$
Figure 5. Thermal impedance for TO-220FP
V
7M &
7F &
6LQJOH
SXOVH
V
PV
PV
9'69
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
,' $0Y
$
V
V
V
7M &
7F &
6LQJOH
SXOVH
PV
PV
9'69
6/28 DocID028726 Rev 1
6 Page | |||
ページ | 合計 : 28 ページ | ||
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部品番号 | 部品説明 | メーカ |
STU10NM60N | Power MOSFETs | ST Microelectronics |