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PDF IRLS4030-7PPBF Data sheet ( Hoja de datos )
| Número de pieza | IRLS4030-7PPBF | |
| Descripción | 100V Single N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD -97371
IRLS4030-7PPbF
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l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case jk
RθJA Junction-to-Ambient (PCB Mount) ij
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
3.2mΩ
max. 3.9mΩ
S ID
190A
D
G
Gate
S
SS
S
S
G
D2Pak 7 Pin
D
Drain
S
Source
Max.
190
130
750
370
2.5
± 16
13
-55 to + 175
300
10lbxin (1.1Nxm)
320
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
02/12/09
1 page  
IRLS4030-7PPbF
1
D = 0.50
0.1
www.datasheet4u.com
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ τJ
τ1 τ1
R 1R 1
C i=Ci=τi/τRi/iRi
R2R 2
τ2 τ2
Ri (°C/W)
τCτC 0.176
0.227
τi (sec)
0.000343
0.006073
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100 0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
10 0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
400 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle
1. Avalanche failures assumption:
ID = 110A
300
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
200
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
100
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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| PDF Descargar | [ Datasheet IRLS4030-7PPBF.PDF ] | |
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