|
|
G4BC20FDのメーカーはInternational Rectifierです、この部品の機能は「IRG4BC20FD」です。 |
部品番号 | G4BC20FD |
| |
部品説明 | IRG4BC20FD | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとG4BC20FDダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.datasheet4u.com
PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
G
E
n-channel
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
64
64
7.0
32
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
1
7/11/2000
1 Page www.datasheet4u.com
14
12
10
8 S qua re wave:
60% of rated
6 voltage
I
4
2 Ideal diodes
0
0.1
IRG4BC20FD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow e r Dis sip ation = 13 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
100
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12 13 14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages www.datasheet4u.com
IRG4BC20FD
3.0 RG = 50OΩhm
T J = 150° C
2.5
VCC = 480V
VGE = 15V
2.0
100 VGE = 20V
T J = 125 oC
1.5 10
1.0
0.5
0.0
0 4 8 12 16
I C , Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
20 1 10 100
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 1 50 °C
TJ = 1 25 °C
TJ = 25 °C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Volta ge D ro p - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ G4BC20FD データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
G4BC20F | IRG4BC20F | International Rectifier |
G4BC20FD | IRG4BC20FD | International Rectifier |