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G4BC20FD の電気的特性と機能

G4BC20FDのメーカーはInternational Rectifierです、この部品の機能は「IRG4BC20FD」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4BC20FD
部品説明 IRG4BC20FD
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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G4BC20FD Datasheet, G4BC20FD PDF,ピン配置, 機能
www.datasheet4u.com
PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
Benefits
G
E
n-channel
Generation -4 IGBTs offer highest efficiencies
available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
64
64
7.0
32
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
2.1
3.5
–––
80
–––
Units
°C/W
g (oz)
1
7/11/2000

1 Page





G4BC20FD pdf, ピン配列
www.datasheet4u.com
14
12
10
8 S qua re wave:
60% of rated
6 voltage
I
4
2 Ideal diodes
0
0.1
IRG4BC20FD
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow e r Dis sip ation = 13 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
100
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10 11 12 13 14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4BC20FD 電子部品, 半導体
www.datasheet4u.com
IRG4BC20FD
3.0 RG = 50Ohm
T J = 150° C
2.5
VCC = 480V
VGE = 15V
2.0
100 VGE = 20V
T J = 125 oC
1.5 10
1.0
0.5
0.0
0 4 8 12 16
I C , Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
20 1 10 100
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 1 50 °C
TJ = 1 25 °C
TJ = 25 °C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Volta ge D ro p - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

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共有リンク

Link :


部品番号部品説明メーカ
G4BC20F

IRG4BC20F

International Rectifier
International Rectifier
G4BC20FD

IRG4BC20FD

International Rectifier
International Rectifier


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