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PDF V23990-P849-A4X-PM Data sheet ( Hoja de datos )
| Número de pieza | V23990-P849-A4X-PM | |
| Descripción | Flow PIM | |
| Fabricantes | Vincotech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de V23990-P849-A4X-PM (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
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www.DfalotaSwhePet4IMU.co0m3rd Gen
Features
Ɣ Tyco 2 clip-in housing in 12 and 17mm height
Ɣ Trench Fieldstop IGBT's 4 technology
Ɣ Optional w/o BRC
Target Applications
Ɣ Industrial Drives
Ɣ Embedded Generation
Types
Ɣ V23990-P849-A49-PM 17mm height
Ɣ V23990-P849-A48-PM 12mm height
Ɣ V23990-P849-C49-PM 17mm height; w/o BRC
Ɣ V23990-P849-C48-PM 12mm height; w/o BRC
V23990-P849-A4X/C4x-PM
preliminary datasheet
1200V / 8A
flow 0 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
Value
Unit
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
DC current
tp=10ms
Tj=Tjmax
IR=0.05mA
180°sine
Tj=25°C
Th=80°C
Tc=80°C
Tj=Tjmax
Th=80°C
Tc=80°C
1600
28
4,0,$J$2*6-6)="","",OFFSET
220
V
A
A
200 A2s
33
W
150 °C
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Parameter
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Symbol
Characteristic Values
Conditions
VGE(V) or VGS(V)
Vr(V) or
VCE(V) or
VDS(V)
IC(A) or IF(A) T(°C)
or ID(A)
V23990-P849-A4X/C4x-PM
preliminary datasheet
Value
Min Typ Max
Unit
VGE(th) VCE=VGE
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
td(off)
Rgon=64Ohm
tf Rgoff=64Ohm
Eon
Eoff
Cies
Coss f=1MHz
Crss
QGate
RthJH
RthJC
Thermal grease
thickness50um
Ȝ = 0,61 W/mK
15
0
20
±15
0
±15
1200
0
600
25
0.15m
4
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
600 4
Tj=25°C
5 5,8 6,5 V
1,96
2,17
2,2
0,05
V
mA
200 nA
none
Ohm
90 ns
24 ns
226 ns
99 ns
0,34 mWs
0,3 mWs
0,25 nF
0,025
nF
0,015
nF
nC
2,93 K/W
K/W
VF
Ir
IRRM
trr Rgon=64Ohm
Qrr
di(rec)max
/dt
Erec
RthJH
RthJC
Thermal grease
thickness50um
Ȝ = 0,61 W/mK
±15
4
600 4
Tj=25°C
Tj=125°C
1
1,91 2,35
1,84
V
Tj=25°C
Tj=125°C
250 mA
Tj=25°C
Tj=125°C
4,65
A
Tj=25°C
Tj=125°C
446
ns
Tj=25°C
Tj=125°C
0,76
mC
Tj=25°C
Tj=125°C
40
A/ms
Tj=25°C
Tj=125°C
0,32 mWs
3,98 K/W
K/W
R25 Tol. ±5%
DR/R R100=1503Ohm
P
B(25/100) Tol. ±3%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
210
3980
23,1
kOhm
%/K
mW
K
Copyright by Vincotech
copyright Tyco Electronics
5
Revision: 1
Revision: 1
5 Page 
www.DataSheet4U.com
Figure 13
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output Inverter
V23990-P849-A4X/C4x-PM
preliminary datasheet
Output inverter IGBT
Figure 14
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FRED diode
100 100
10-1
10-2
10-5
With
D=
RthJH =
10-4
tp / T
2,16
10-3
K/W
IGBT thermal model values
10-2
R (C/W)
0,05
0,25
0,99
0,45
0,24
0,18
Tau (s)
4,1E+00
5,5E-01
1,0E-01
1,9E-02
3,3E-03
4,0E-04
Figure 15
Gate voltage vs Gate charge
Output inverter IGBT
Uge = f (Qg)
17,5
15
240V
12,5
10
7,5
5
2,5
0
0 10 20 Qg3(0nC)
At
VCE (80%) =
VCE (20%) =
VGE =
IC (100%) =
Qg =
960 V
240 V
15 V
8A
50 nC
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100 t p (s)
101
Output inverter IGBT
960V
40 50 60
10-1
10-2
10-5
With
D=
RthJH =
10-4
tp / T
2,68
10-3
K/W
10-2
FRED thermal model values
R (C/W)
0,05
0,27
1,07
0,69
0,36
0,25
Tau (s)
7,9E+00
7,3E-01
1,3E-01
2,5E-02
3,6E-03
4,3E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1 100 t p (s) 101
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11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet V23990-P849-A4X-PM.PDF ] | |
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