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PDF V23990-P848-A4X-PM Data sheet ( Hoja de datos )
| Número de pieza | V23990-P848-A4X-PM | |
| Descripción | Flow PIM | |
| Fabricantes | Vincotech | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de V23990-P848-A4X-PM (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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www.DfalotaSwhePet4IMU.co0m3rd Gen
Features
● flow0 2 clip-in housing in 12 and 17mm height
● Trench Fieldstop IGBT's 4 technology
● Optional w/o BRC
Target Applications
● Industrial Drives
● Embedded Generation
Types
● V23990-P848-A49-PM 17mm height
● V23990-P848-A48-PM 12mm height
● V23990-P848-C49-PM 17mm height; w/o BRC
● V23990-P848-C48-PM 12mm height; w/o BRC
V23990-P848-A4X/C4x-PM
preliminary datasheet
1200V / 4A
flow 0 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
Value
Unit
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
DC current
tp=10ms
Tj=Tjmax
IR=0.05mA
180°sine
Tj=25°C
Th=80°C
Tc=80°C
Tj=Tjmax
Th=80°C
Tc=80°C
1600
28
4,0,$J$2*6-6)="","",OFFSET
220
V
A
A
200 A2s
33 W
150 °C
copyright Vincotech Ltd.
1
Revision: 1
1 page  
V23990-P848-A4X/C4x-PM
preliminary datasheet
Characteristic Values
www.DataSheet4U.com
Parameter
Symbol
Conditions
Transistor BRC
VGE(V) or VGS(V)
● flow0 2 clip-in housing in 12 and 17mm height
Vr(V) or
VCE(V) or
VDS(V)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
VGE(th) VCE=VGE
VCE(sat)
ICES
15
0
1200
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
IGES
Rgint
td(on)
tr
20 0
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
td(off)
tf
Eon
Eoff
Rgon=64Ohm
Rgoff=64Ohm
±15
600
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coss
Crss
QGate
f=1MHz
0
±15
25
600
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
IC(A) or IF(A)
or ID(A)
T(°C)
0.15m
4
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
4 Tj=25°C
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
VF
Ir
IRRM
trr Rgon=32Ohm
Qrr
di(rec)max
/dt
Erec
RthJH
RthJC
Thermal grease
thickness≤50um
λ = 0,61 W/mK
±15
4
600 4
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Thermistor
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
R25 Tol. ±5%
DR/R R100=1503Ohm
P
B(25/100) Tol. ±3%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
Value
Min Typ Max
5 5,8 6,5
1,96
2,17
2,2
0,05
200
none
90
24
226
99
0,34
0,3
0,25
0,025
0,015
2,93
1 1,91 2,35
1,84
250
4,65
446
0,76
40
0,32
3,98
20,9
22
2,9
210
3980
23,1
Unit
V
V
mA
nA
Ohm
ns
ns
ns
ns
mWs
mWs
nF
nF
nF
nC
K/W
K/W
V
mA
A
ns
mC
A/ms
mWs
K/W
K/W
kOhm
%/K
mW
K
copyright Vincotech Ltd.
5
Revision: 1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet V23990-P848-A4X-PM.PDF ] | |
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