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STP08IE120F4 の電気的特性と機能

STP08IE120F4のメーカーはSTMicroelectronicsです、この部品の機能は「Emitter Switched Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP08IE120F4
部品説明 Emitter Switched Bipolar Transistor
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP08IE120F4 Datasheet, STP08IE120F4 PDF,ピン配置, 機能
STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10
Preliminary Data
General features
VCS(ON)
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0.8 V
IC
8A
RCS(ON)
0.10 W
High voltage / high current Cascode
configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low Ciss driven by RG = 47
Very low turn-off cross over time
Applications
Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
Order codes
Part Number
Marking
STP08IE120F4
P08IE120F4
Package
TO220FP-4L
Packing
Tube
November 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11

1 Page





STP08IE120F4 pdf, ピン配列
STP08IE120F4
1 Electrical ratings
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Table 1.
Symbol
Absolute maximum rating
Parameter
VCS(SS) Collector-source voltage (VBS = VGS = 0 V)
VBS(OS) Base-source voltage (IC = 0, VGS = 0 V)
VSB(OS) Source-base voltage (IC = 0, VGS = 0 V)
VGS Gate-source voltage
IC Collector current
ICM Collector peak current (tP < 5ms)
IB Base current
IBM Base peak current (tP < 5ms)
Ptot Total dissipation at Tc = 25°C
Tstg Storage temperature
TJ Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
__max
Electrical ratings
Value
1200
30
17
± 17
8
24
6
12
21
-40 to 150
150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
Value
6
Unit
°C/W
3/11


3Pages


STP08IE120F4 電子部品, 半導体
Electrical characteristics
STP08IE120F4
Figure 7. Reverse biased safe operting Figure 8. Gate threshold voltage vs
area
temperature
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Figure 9. Dynamic collector-emitter
saturation voltage
Figure 10. Inductive load switching time
Figure 11. Inductive load switching time
6/11

6 Page



ページ 合計 : 11 ページ
 
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部品番号部品説明メーカ
STP08IE120F4

Emitter Switched Bipolar Transistor

ST Microelectronics
ST Microelectronics
STP08IE120F4

Emitter Switched Bipolar Transistor

STMicroelectronics
STMicroelectronics


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