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GM76V256C の電気的特性と機能

GM76V256CのメーカーはHynix Semiconductorです、この部品の機能は「32K x8 bit 3.3V Low Power CMOS slow SRAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 GM76V256C
部品説明 32K x8 bit 3.3V Low Power CMOS slow SRAM
メーカ Hynix Semiconductor
ロゴ Hynix Semiconductor ロゴ 




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GM76V256C Datasheet, GM76V256C PDF,ピン配置, 機能
Document Title
32K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No History
00
www.DataSheet4U.com
Revision History Insert
Revised
- Datasheet format change
- PDIP package type insert
- Pin configuration change
01 Marking Information Add
Revised
- AC Test Condition Add : 5pF Test Load
02 Changed Logo
- HYUNDAI - > hynix
GM76V256C Series
32Kx8bit CMOS SRAM
Draft Date
Jul.08.2000
Remark
Final
Dec.04.2000 Final
Apr.30.2000 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 02 / Apr. 2001
Hynix Semiconductor

1 Page





GM76V256C pdf, ピン配列
GM76V256C Series
ORDERING INFORMATION
Part No.
GM76V256CL
GM76V256CLL
GM76V256CLE
GM76V256CLLE
GM76V256CLFW
GM76V256CLLFW
GM76V256CLEFW
GM76V256CLLEFW
www.DataSheetG4UM.c7o6mV256CLT
GM76V256CLLT
GM76V256CLET
GM76V256CLLET
Speed
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
Power
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
Temp
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
Package
PDIP
PDIP
PDIP
PDIP
SOP
SOP
SOP
SOP
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT Power Supply, Input/Output Voltage
-0.3 to 4.6
V
TA
Operating Temperature GM76V256C
0 to 70
°C
GM76V256CE
-25 to 85
°C
TSTG
Storage Temperature
-65 to 150
°C
PD Power Dissipation
1.0 W
IOUT
Data Output Current
50 mA
TSOLDER
Lead Soldering Temperature & Time
260 10
°Csec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Vcc
Power Supply Voltage
3.0
Vss Ground
0
VIH Input High Voltage
2.2
VIL
Input Low Voltage
-0.3(1)
Note
1. VIL = -3.0V for pulse width less than 50ns
Typ.
3.3
0
-
-
Max.
3.6
0
Vcc+0.3
0.4
TRUTH TABLE
/CS /WE /OE
Mode
H X X Standby
L H H Output Disabled
L H L Read
L L X Write
Note
1. H=VIH, L=VIL, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
Unit
V
V
V
V
Rev 02 / Apr. 2001
2


3Pages


GM76V256C 電子部品, 半導体
TIMING DIAGRAM
READ CYCLE 1
ADDR
OE
www.DataSheet4U.com
CS
Data
Out
High-Z
tRC
tAA
tOE
tOLZ
tACS
tCLZ
GM76V256C Series
tOH
tOHZ
tCHZ
Data Valid
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
ADDR
Data
Out
tAA
tOH
Previous Data
tRC
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= VIL.
3. /OE =VIL.
Rev 02 / Apr. 2001
5

6 Page



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[ GM76V256C データシート.PDF ]


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共有リンク

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部品番号部品説明メーカ
GM76V256C

32K x8 bit 3.3V Low Power CMOS slow SRAM

Hynix Semiconductor
Hynix Semiconductor


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