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FGA15N120FTD の電気的特性と機能

FGA15N120FTDのメーカーはFairchild Semiconductorです、この部品の機能は「15A Field Stop Trench IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA15N120FTD
部品説明 15A Field Stop Trench IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA15N120FTD Datasheet, FGA15N120FTD PDF,ピン配置, 機能
March 2013
FGA15N120FTD
1200 V, 15 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.58 V @ IC = 15 A
• High Input Impedance
• RoHS Complaint
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
@ TC = 100oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
1
G
E
Ratings
1200
25
30
15
45
15
90
220
88
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.57
2.1
62.5
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com

1 Page





FGA15N120FTD pdf, ピン配列
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Cyrrent
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 15A
IES =15A,
dI/dt = 200A/s
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.4
1.42
575
577
30
37
8.7
10.7
Max
1.8
-
-
-
-
-
-
-
Unit
V
ns
A
C
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
3
www.fairchildsemi.com


3Pages


FGA15N120FTD 電子部品, 半導体
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
600
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
TC = 125oC
tr
100
td(on)
10
10
15 20 25
Collector Current, IC [A]
30
Figure 15. Switching Loss vs. Gate Resistance
10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
1000
Eoff
Eon
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
tf
100
td(off)
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
TC = 125oC
10
10
15
20
25
Collector Current, IC [A]
30
Figure 16. Switching Loss vs. Collector Current
10000
Common Emitter
VGE = 15V, RG = 15
TC = 25oC
TC = 125oC
Eoff
1000
Eon
100
0
20 40 60 80
Gate Resistance, RG []
100
100
10
15 20 25
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
40
80
30
10
TJ = 125oC
10 TJ = 25oC
1
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000 2000
Collector-Emitter Voltage, VCE [V]
0.1
0.0
TC = 25oC
TC = 125oC
0.5 1.0 1.5 2.0
Forward Voltage, VF [V]
2.5
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. C0
6
www.fairchildsemi.com

6 Page



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部品番号部品説明メーカ
FGA15N120FTD

15A Field Stop Trench IGBT

Fairchild Semiconductor
Fairchild Semiconductor


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