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STB75NF20のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STB75NF20 |
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部品説明 | N-channel Power MOSFET | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTB75NF20ダウンロード(pdfファイル)リンクがあります。 Total 16 pages
STB75NF20
STP75NF20 - STW75NF20
N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247
Low gate charge STripFET™ Power MOSFET
General features
www.DataSheet4U.com Type
STB75NF20
STP75NF20
STW75NF20
VDSS
200V
200V
200V
RDS(on)
<0.034Ω
<0.034Ω
<0.034Ω
■ Exceptional dv/dt capability
■ Low gate charge
■ 100% Avalanche tested
ID
75A
75A
75A
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters
Applications
■ Switching application
3
1
D²PAK
TO-247
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB75NF20
STP75NF20
STW75NF20
Marking
75NF20
75NF20
75NF20
Package
D²PAK
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
March 2007
Rev 2
1/16
www.st.com
16
1 Page STB75NF20 - STP75NF20 - STW75NF20
1 Electrical ratings
Electrical ratings
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Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(1)
dv/dt
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Derating factor
Peak diode recovery voltage slope
PTOT
TJ
Tstg
Total dissipation at TC = 25°C
Operating junction temperature
Storage temperture
1. ISD < 75A, di/dt < 400A/µs, VDD < 160
Table 2. Thermal resistance
Symbol
Parameter
RthJC
RthJ-pcb (1)
RthJA
Tl
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on inch²FR-4 board (t < 10µs)
Value
200
± 20
75
47
300
1.52
15
190
-50 to 150
Unit
V
V
A
A
A
W/°C
V/ns
W
°C
Value
TO-220/D²PAK TO-247
0.66
34
62.5
--
40
300
Unit
°C/W
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ= 25°C, Id= Iar, Vdd=50V)
Max value
37
205
Unit
A
mJ
3/16
3Pages Electrical characteristics
STB75NF20 - STP75NF20 - STW75NF20
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220 /
D²PAK
Figure 2. Thermal impedance for TO-220 /
D²PAK
www.DataSheet4U.com
Figure 3. Safe operating area for TO-247
Figure 4. Thermal impedance for TO-247
Figure 5. Output characterisics
Figure 6. Transfer characteristics
6/16
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ページ | 合計 : 16 ページ | ||
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PDF ダウンロード | [ STB75NF20 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
STB75NF20 | N-channel Power MOSFET | STMicroelectronics |