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PDF STB40NE03L-20 Data sheet ( Hoja de datos )
| Número de pieza | STB40NE03L-20 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB40NE03L-20
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
VDSS
RDS(on)
ID
www.DataSheet4U.com
s TYPICAL RDS(on) = 0.014 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE A 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size™ ”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
Unit
30 V
30 V
± 15
V
40 A
28 A
160 A
80
0.53
W
W/oC
7
-65 to 175
175
(1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
November 1997
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STB40NE03L-20
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STB40NE03L-20.PDF ] | |
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