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PDF MCR218-10FP Data sheet ( Hoja de datos )
| Número de pieza | MCR218-10FP | |
| Descripción | Silicon Controlled Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MCR218-6FP, MCR218-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
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80 A Surge
Current
Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
MCR218–6FP
MCR218–10FP
VDRM,
VRRM
400
800
Unit
Volts
On-State RMS Current (TC = +70°C)(2) IT(RMS) 8.0 Amps
(180° Conduction Angles)
Peak Nonrepetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing (t = 8.3 ms)
ITSM
I2t
100 Amps
26 A2s
Forward Peak Gate Power
v(TC = +70°C, Pulse Width 1.0 µs)
PGM
5.0 Watts
Forward Average Gate Power
(TC = +70°C, t = 8.3 ms)
PG(AV) 0.5 Watt
Forward Peak Gate Current
v(TC = +70°C, Pulse Width 1.0 µs)
pRMS Isolation Voltage (TA = 25°C,
Relative Humidity 20%) ( )
IGM
V(ISO)
2.0 Amps
1500
Volts
Operating Junction Temperature
TJ
–40 to
°C
+125
Storage Temperature Range
Tstg
–40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) The case temperature reference point for all TC measurements is a point on
the center lead of the package as close as possible to the plastic body.
http://onsemi.com
ISOLATED SCRs (
8 AMPERES RMS
400 thru 800 VOLTS
)
G
AK
1
2
3
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
ORDERING INFORMATION
Device
Package
Shipping
MCR218–6FP ISOLATED TO220FP 500/Box
MCR218–10FP ISOLATED TO220FP 500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
MCR218FP/D
1 page  
MCR218–6FP, MCR218–10FP
22
VD = 12 V
1.6 1.6
VD = 12 V
1.2 1.2
0.8 0.8
0.4
0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
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Figure 6. Typical Gate Trigger Current versus
Temperature
0.4
0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage versus
Temperature
2
VD = 12 V
1.6
1.2
0.8
0.4
0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current versus Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MCR218-10FP.PDF ] | |
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