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VN0606MのメーカーはSiliconixです、この部品の機能は「N-Channel Enhancement Mode MOSFET Transistors」です。 |
部品番号 | VN0606M |
| |
部品説明 | N-Channel Enhancement Mode MOSFET Transistors | ||
メーカ | Siliconix | ||
ロゴ | |||
このページの下部にプレビューとVN0606Mダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TN0601L, VN0606L/M, VN66AFD
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
TN0601L
VN0606L
VN0606M
www.DataSheet4U.comVN66AFD
V(BR)DSS Min (V)
60
rDS(on) Max (W)
1.8 @ VGS = 10 V
3 @ VGS = 10 V
3 @ VGS = 10 V
3 @ VGS = 10 V
VGS(th) (V)
0.5 to 2
0.8 to 2
0.8 to 2
0.8 to 2.5
ID (A)
0.47
0.33
0.39
1.46
Features
D Low On-Resistance: 1.2 W
D Low Threshold: <1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
Benefits
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
TO-226AA
(TO-92)
TO-237
(Tab Drain)
Applications
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-220SD
(Tab Drain)
S1
S1
S1
G2
G2
G2
D3
D3
D3
Top View
TN0601L
VN0606L
Top View
VN0606M
Top View
VN66AFD
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol TN0601L VN0606L VN0606M VN66AFDb Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Maximum Junction-to-Ambient
TA= 25_C
TA= 100_C
Maximum Junction-to-Case
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, Tstg
60
"20
0.47
0.29
1.5
0.8
0.32
156
60
"30
0.33
0.21
1.6
0.8
0.32
156
60
"30
0.39
0.25
2
1.0
0.4
125
–55 to 150
60
"30
1.46
0.92
3
15
6
8.3
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70201.
Siliconix
S-52426—Rev. C, 14-Apr-97
1
1 Page TN0601L, VN0606L/M, VN66AFD
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
2.0
8V
VGS = 10 V
7V
1.6
TJ = 25_C
1.2
6V
0.8
www.DataSheet4U.com
0.4
5V
4V
3V
0
0
1.0
123 4
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
TJ = –55_C
25_C
5
0.8 VDS = 15 V
125_C
0.6
0.4
0.2
0
0 2 4 6 8 10
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.5
2.0 TJ = 25_C
1.5 VGS = 10 V
1.0
0.5
0
0 0.4 0.8 1.2 1.6
ID – Drain Current (A)
Siliconix
S-52426—Rev. C, 14-Apr-97
2.0
Output Characteristics for Low Gate Drive
100
VGS = 10 V
TJ = 25_C
2.8 V
80
2.6 V
60
40 2.4 V
2.2 V
20
2.0 V
1.8 V
0
0 0.4 0.8 1.2 1.6 2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.8
1.0 A
TJ = 25_C
2.4
2.0 0.5 A
1.6
1.2
0.8 ID = 0.1 A
0.4
0
0 4 8 12 16 20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.25
VGS = 10 V
2.00
I D = 1.0 A
1.75
0.2 A
1.50
1.25
1.00
0.75
0.50
–50
–10 30
70 110
TJ – Junction Temperature (_C)
150
3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ VN0606M データシート.PDF ] |
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