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GP50B60PD1のメーカーはInternational Rectifierです、この部品の機能は「IRGP50B60PD1」です。 |
部品番号 | GP50B60PD1 |
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部品説明 | IRGP50B60PD1 | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとGP50B60PD1ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
SMPS IGBT
PD - 94625A
IRGP50B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
www.DataFSheeaett4uUr.ecosm
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
1
Max.
600
75
45
150
150
40
15
60
±20
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0 (0.21)
Max.
0.32
1.7
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
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6/7/04
1 Page www.DataSheet4U.com
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
100
10
1
10
100
VCE (V)
1000
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
200
180 VGE = 15V
160
VGE = 12V
VGE = 10V
140 VGE = 8.0V
VGE = 6.0V
120
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
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IRGP50B60PD1
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
200
180
VGE = 15V
VGE = 12V
160 VGE = 10V
140
VGE = 8.0V
VGE = 6.0V
120
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
200
180 VGE = 15V
160
VGE = 12V
VGE = 10V
140 VGE = 8.0V
VGE = 6.0V
120
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
3
3Pages IRGP50B60PD1
100
VR = 200V
TJ = 125°C
TJ = 25°C
80
IF = 30A
60
I F = 15A
40
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IF = 5.0A
20
100
dif /dt - (A/µs)
1000
Fig. 19 - Typical Reverse Recovery vs. dif/dt
800
VR = 200V
TJ = 125°C
TJ = 25°C
600
IF = 30A
400
IF = 15A
IF = 5.0A
200
0
100
dif /dt - (A/µs)
1000
Fig. 21 - Typical Stored Charge vs. dif/dt
100
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 15A
10
IF = 30A
IF = 5.0A
1
100 1000
di f /dt - (A/µs)
Fig. 20 - Typical Recovery Current vs. dif/dt
1000
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 5.0A
I F = 15A
I F = 30A
100
100
di f /dt - (A/µs)
1000
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
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部品番号 | 部品説明 | メーカ |
GP50B60PD1 | IRGP50B60PD1 | International Rectifier |