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G4PC30FのメーカーはInternational Rectifierです、この部品の機能は「IRG4PC30F」です。 |
部品番号 | G4PC30F |
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部品説明 | IRG4PC30F | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとG4PC30Fダウンロード(pdfファイル)リンクがあります。 Total 8 pages
PD 91459B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30F
Fast Speed IGBT
Features
• Fast: Optimized for medium operating
www.DataSheet4U.com frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
31
17
120
120
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
1
1229//00
1 Page IRG4PC30F
50
www.DataSheet4U.com
40
30
S quare wave:
60% of rated
volta ge
20
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G a te drive as spe cifie d
P ow er D issipation = 24W
Triangular wave:
C lam p v oltage :
80% o f rated
1 0 Ideal diodes
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
1000
1000
TJ = 25°C
100
TJ = 150°C
10
100
TJ = 150°C
TJ = 25°C
10
V GE = 15V
1 20µs PULSE WIDTH A
1 10
VC E , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10 11 12 13
VG E, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages IRG4PC30F
www.DataSheet4U.com
6.0
RG = 23 Ω
T J = 150°C
5.0 V CC = 480V
V GE = 15V
4.0
3.0
2.0
1.0
0.0
0
A
10 20 30 40
IC , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGGE E= 2 0V
TJ = 125°C
100
SAFE OPERATING AREA
10
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ G4PC30F データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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