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VRF154FL の電気的特性と機能

VRF154FLのメーカーはMicrosemiです、この部品の機能は「RF Power Vertical MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VRF154FL
部品説明 RF Power Vertical MOSFET
メーカ Microsemi
ロゴ Microsemi ロゴ 




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VRF154FL Datasheet, VRF154FL PDF,ピン配置, 機能
RF POWER VERTICAL MOSFET
The VRF154FL is a gold metallized silicon, n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, and inter-modulation
distortion.
VRF154FL
50V 600W 80MHz
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FEATURES
• Designed For 2 - 100MHz Operation
• 600W with 17dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• Economical Flangeless Package
• Nitride Passivated
• Refractory Gold Metallization
Maximum Ratings
Symbol
VDD
VDGO
ID
VGS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
All Ratings: TC = 25°C unless otherwise specified
VRF154FL
Unit
160
160
Volts
60 Amps
±40 Volts
1350
Watts
-65 to 150
200
°C
Static Electrical Characteristics
Symbol Parameter
V(BR)DSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
On State Drain Voltage (ID(ON) = 40A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
Min Typ Max Unit
160
180
3.0
5.0
Volts
20 mA
5.0 µA
16 mhos
2 5 Volts
Thermal Characteristics
Symbol
RθJC
Characteristic
Junction to Case Thermal Resistance
Microsemi Website - http://www.microsemi.com
Min Typ Max Unit
0.13 °C/W

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VRF154FL pdf, ピン配列
20±80MHz 1.0kW Broadband Amplifier
BIAS
±
30 ± 40 V
+
R5 R6
R4
IC1
C1 R3
D1
R7
D2
R1
INPUT
D3
R2
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R8
R9
C2
C8
R13 C10
D.U.T.
R11 XTR
R12 XTR
T1
C9
R10
C3
D.U.T.
R14 C11
VRF154FL
L1 L2
+
C5
C4
+
40 V
±
C6 OUTPUT
C7
T2
TEMP. TRACKING
C1 - 1000pF Ceramic
C2, C3, C4, C8, C9, C10, C11 - 0.1µF Ceramic
C5 - 10µF/100 V Electrolytic
C6, C7 - 0.1µF Ceramic, (ATC 200/823 or Equivalent)
D1 - 28V Zener, 1N5362 or Equivalent
D3 - 1N4148
IC1 - MC1723
L1, L2 - Fair±Rite Products Corp. Ferrite Beads
#2673000801
R1, R2, R3 - 10kTrimpot
R4 - 1.0 k/1.0W
R5 - 10 Ohms
R6 - 2.0k
R7 - 10k
R8 - Thermistor, 10k (25 5C), 2.5k (75 5C)
R9, R10 -100 Ohms
R11, R12 -1.0k
R13, R14 -50 ±100 Ohms, 4.0 x 2.0 W Carbon in Parallel
T1 - 9:1 Transformer, Trifilar and Balun Wound on Separate
T1 Ð Fair±Rite Products Corp. Balun Cores #286100012, 5 Turns Each.
T2 - 1:9 Transformer, Balun 50 Ohm CO±AX Cable RG±188,
T2 Ð Low Impedance Lines W.L. Gore 16 Ohms CO±AX Type CXN 1837.
T2 Ð Each Winding Threaded Through Two Fair±Rite Products Corp.
T2 Ð #2661540001 Ferrite Sleeves (6 Each).
XTR - MRF154
Thermal Considerations and Package
Mounting:
The rated 1350W power dissipation is only
available when the package mounting surface is
at 25°C and the junction temperature is 200°C.
The thermal resistance between junctions and
case mounting surface is 0.12°C/W. When instal-
led, an additional thermal impedance of 0.1°C/W
between the package base and the mounting sur-
face is typical. Insure that the mounting surface
is smooth and flat. Thermal joint compound
must be used to reduce the effects of small sur-
face irregularities. The heatsink should incorpo-
rate a copper heat spreader to obtain best re-
sults. Use 4-40 or M3 screws torqued to 1.2 Nm.
.250
.250
.125d
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide-
BeO. B eryllium oxide dust is toxic when in-
haled. C are must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
Microsemi
5,256,583 4
.466
.150r .500
.750 1.000
1.250
1.500
.500
.300
.200
.005 .040
D
G
S
1
23
4
1 Drain
2 Source
3 Source
4 Gate


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部品番号部品説明メーカ
VRF154FL

RF Power Vertical MOSFET

Microsemi
Microsemi


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