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PDF SI6963BDQ Data sheet ( Hoja de datos )
| Número de pieza | SI6963BDQ | |
| Descripción | Dual P-Channel 2.5-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Si6963BDQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.045 @ VGS = −4.5 V
−20
0.080 @ VGS = −2.5 V
TSSOP-8
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D1 1 D
S1 2
Si6963BDQ
S1 3
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6963BDQ-T1—E3
ID (A)
−3.9
−3.0
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
−3.9
−3.1
−1.0
1.13
0.73
−20
"12
−30
−55 to 150
−3.4
−2.7
−0.75
0.83
0.53
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
Document Number: 72772
S-40439—Rev. A, 15-Mar-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
90
125
67
Maximum
110
150
80
Unit
_C/W
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New Product
Si6963BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
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10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72772
S-40439—Rev. A, 15-Mar-04
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5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI6963BDQ.PDF ] | |
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