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PDF SI6968BEDQ Data sheet ( Hoja de datos )
| Número de pieza | SI6968BEDQ | |
| Descripción | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain | |
| Fabricantes | Vishay Siliconix | |
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Si6968BEDQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.022 @ VGS = 4.5 V
20
0.030 @ VGS = 2.5 V
ID (A)
6.5
5.5
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
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TSSOP-8
D 1D
S1 2
S1 3
G1 4
8D
7 S2
6 S2
5 G2
Top View
Ordering Information:
Si6968BEDQ-T1 (with Tape and Reel)
G1
D
*300 W
N-Channel
S1
*Typical value by design
D
*300 W
G2
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
6.5
5.5
1.5
1.5
0.96
20
"12
30
- 55 to 150
5.2
3.5
1.0
1.0
0.64
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady-State
Steady-State
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72274
S-31362—Rev. A, 30-Jun-03
Symbol
RthJA
RthJF
Typ
72
100
55
Max
83
120
70
Unit
_C/W
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1
1 page  
Si6968BEDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
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10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72274
S-31362—Rev. A, 30-Jun-03
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI6968BEDQ.PDF ] | |
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