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SBR8100のメーカーはDaesan Electronicsです、この部品の機能は「(SBR820 - SBR8100) CURRENT 8.0 AMPERES」です。 |
部品番号 | SBR8100 |
| |
部品説明 | (SBR820 - SBR8100) CURRENT 8.0 AMPERES | ||
メーカ | Daesan Electronics | ||
ロゴ | |||
このページの下部にプレビューとSBR8100ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
SBR820 THRU SBR8100
CURRENT 8.0Amperes
VOLTAGE 20 to 100 Volts
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
www.Data·SHheigeth4Uc.cuormrent capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250 /10 seconds, 0.25" (6.35mm) from case
Mechanical Data
· Case : JEDEC TO-220A molded plastic body
· Terminals: Lead solderable per
MIL-STD-750, Method 2026
· Polarity: As marked
· Mounting Position: Any
· Weight: 0.08ounce, 2.24 grams
TO-220A
.108
(2.75)
.040
(1.0)
MAX.
.051
(1.3)
MAX.
.040
(1.0)
MAX.
.412
(10.5)
MAX.
3.8 f +.2 .180
HOLE THRU (4.6)
.248
(6.3) .595
(15.1)
MAX.
.550
.158
(4.0)
(14.0)
MIN.
MAX.
.050
(1.27)
PIN 1 +
.200
(5.08)
+
PIN 2
CASE
Case Positive
.120
(3.05)
PIN 1
PIN 2 +
CASE
Case Negative
Suffix "R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Maximum repetitive peak reverse voltage
Symbols
VRRM
S8B20R
SBR
830
S8B40R
S8B50R
SBR
860
SBR SBR
880 8100
20 30 40 50 60 80 100
Maximum RMS voltage
VRMS
14 21 28 35 42 56 70
Maximum DC blocking voltage
VDC 20 30 40 50 60 80 100
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
TA=25
TA=125
Typical thermal resistance (Note 2)
I(AV)
IFRM
IFSM
VF
IR
R JC
8.0
16.0
150.0
0.65 0.75 0.80 0.85
1.0
15 50
2.5
Operating junction temperature range
TJ -65 to +125
-65 to +150
Storage temperature range
TSTG
-65 to +150
Notes:
(1) Pulse test: 300 S pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
Units
Volts
Volts
Volts
Amps
Amps
Amps
Volts
mA
/W
1 Page | |||
ページ | 合計 : 2 ページ | ||
|
PDF ダウンロード | [ SBR8100 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SBR810 | Diode ( Rectifier ) | American Microsemiconductor |
SBR8100 | (SBR820 - SBR8100) CURRENT 8.0 AMPERES | Daesan Electronics |
SBR810D | Diode ( Rectifier ) | American Microsemiconductor |