VSC7810 Datasheet PDF - Vitesse Semiconductor Corporation
| Part Number | VSC7810 | |
| Description | Photodetector/Transimpedance Amplifier Family | |
| Manufacturers | Vitesse Semiconductor Corporation | |
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VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7810
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Features
• Integrated Photodetector/Transimpedance
Amplifier Optimized for High-Speed Optical
Communications Applications
• Integrated AGC
www.DataSheet4U.co•m Fibre Channel/Gigabit Ethernet Compatible
• High Bandwidth
• Low Input Noise Equivalent Power
• Large Optically Active Area
• Single 5V Power Supply
Part Number
VSC7810
Data Rate
Full Speed: 1.25Gb/s
Bandwidth
(MHz)
1200
Input Noise
(µW rms)
0.45
Optically Active Area
(µm diameter)
100
General Description
The VSC7810 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting light from a fiber optic communications channel into a differential output voltage. The benefits
of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth
and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle dis-
tortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are
available in either die form, flat-windowed packages or in ball-lens packages.
By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-
tector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7810 Block Diagram
Photodetector/Transimpedance Amplifier
+3.3V
DOUTP
DOUTN
GND
Both DOUTP and DOUTN are back-terminated to 25Ω.
G52145-0, Rev 4.1
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected]
Internet: www.vitesse.com
Page 1
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VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7810
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Temperature Dependence of Operating Parameters
This section describes the dependence of important operating parameters shown in Table 1 as a function of
die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equiva-
lent case temperature, the following thermal characteristics of the package are provided (note that the thermal
conductivity is identical for TO-46 and TO-56 package styles.
www.DataSheet4U.com
Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages
Chip Size
Chip Area A
Die Height (TDIE)
Epoxy Thickness (TEPOXY)
Header Thickness (THEADER)
(Average for TO-46 and TO-56 package)
0.168cm x 0.104cm
0.015cm2
0.066cm
0.0076cm
0.115cm
K GaAs
K epoxy
K kovar
Thermal Conductivities
0.55W/cm °C
0.0186W/cm °C
0.17W/cm °C
Thermal Path
TJ
θGaAs
θEXPOXY
θKOVAR
TC
θGaAs = Tdie =
0.066 = 8 °C/W
KGaAsA
0.55 x 0.015
θepoxy = Tepoxy =
0.0076 = 27.24 °C/W
KepoxyA 0.0186 x 0.015
θkovar = Tkovar =
0.12 = 47 °C/W
KkovarA
0.17 x 0.015
θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W
Example:
For VSC7810 at nominal supply current of 25mA and Vss = 5V
Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C
G52145-0, Rev 4.1
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Internet: www.vitesse.com
Page 5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for VSC7810 electronic component. |
| Information | Total 14 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ VSC7810.PDF Datasheet ] | |
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