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PDF SFH3401 Data sheet ( Hoja de datos )
| Número de pieza | SFH3401 | |
| Descripción | NPN-Silizium-Fototransistor | |
| Fabricantes | OSRAM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SFH3401 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
SFH 3401
www.DataSheet4U.com
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 460 nm bis 1080 nm
• Hohe Linearität
• SMT-Bauform mit Basisanschluß, geeignet für
Vapor Phase-Löten und IR-Reflow-Löten
(JEDEC level 4)
• Nur gegurtet lieferbar
Features
• Especially suitable for applications from
460 nm to 1080 nm
• High linearity
• SMT package with base connection, suitable
for vapor phase and IR reflow soldering
(JEDEC level 4)
• Available only on tape and reel
Anwendungen
• Umgebungslicht-Detektor
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Applications
• Ambient light detector
• Photointerrupters
• Industrial electronics
• For control and drive circuits
Typ
Type
SFH 3401
SFH 3401-2/3
Bestellnummer
Ordering Code
Q62702-P5014
Q62702-P5200
Gehäuse
Package
Klares Epoxy-Gieβharz,
Kollektorkennzeichung: breiter Anschluß
Transparent epoxy resin,
collector marking: broad lead
2001-12-11
1
1 page  
Rel. Spectral Sensitivity,
Srel = f (λ)
100
OHF02332
S rel %
80
70
60
50
40
30
www.DataSheet4U2.c0 om
10
0400 500 600 700 800 900 nm 1100
λ
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Ι PCE 1.6
Ι PCE25
1.4
OHF01524
1.2
1.0
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 C 100
TA
Photocurrent
IPCE = f (VCE) SFH 3401-3
3.0
mA
Ι pce
2.5
OHF00327
1.0 mW/cm 2
2.0
1.5
0.5 mW/cm 2
1.0
0.25 mW/cm 2
0.5
0.1 mW/cm 2
0
0 10 20 30 40 50 60 V 70
Vce
Photocurrent
IPCE = f (Ee), VCE = 5 V
10 1
mA
Ι pce
10 0
1
2
3
10 -1
OHF00326
10 -2
10 -3
10 -4
10 -3 10 -2 mW/cm 2 10 0
Ee
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
10 3
nA
Ι CEO
OHF02342
10 2
10 1
10 0
10 -1
0 20 40 60
Dark Current
ICEO = f (VCE), E = 0
10 2
nA
Ι CEO
80 ˚C 100
TA
OHF02341
10 1
10 0
10 -1
10 -2
0
10 20 30 40 50 V 70
V CE
SFH 3401
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
20 OHF02344
C CE pF
15
10
5
0
10
-2
10 -1
10 0
10 1 V 10 2
VCE
Collector-Base Capacitance
CCB = f (VCB), f = 1 MHz, E = 0
50
pF
C CB 45
OHF00332
40
35
30
25
20
15
10
5
0
10
-2
10 -1 10 0
10 1 V 10 2
V CB
Emitter-Base Capacitance
CEB = f (VEB), f = 1 MHz, E = 0
20 OHF00333
pF
C EB 18
16
14
12
10
8
6
4
2
0
10 -2 10 -1 10 0
10 1 V 10 2
V EB
2001-12-11
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SFH3401.PDF ] | |
Hoja de datos destacado
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| SFH3400 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |  Siemens Semiconductor Group |
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| SFH3400-3 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
| SFH3401 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
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