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PDF 2SK3844 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3844 | |
| Descripción | Silicon N-Channel MOS Type Switching Regulator | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3844 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3844
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK3844
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 63 S (typ.)
• Low leakage current: IDSS = 100 μA (max)(VDS = 60 V)
www.DataSheet•4U.cEonmhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc=25℃)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
45
180
45
527
45
4.0
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 353 μH, IAR = 45 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-17
1 page  
rth − tw
10
2SK3844
www.DataSheet4U.com
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01 0.01
Single pulse
0.001
10 μ
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe operating area
1000
500
300 ID max (Pulse) *
100 μs *
100 ID max (Continuous)
1ms *
30
10 DC Operation
Tc = 25°C
5
3
1
* Single nonrepetitive pulse
0.5 Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
1
Drain−source voltage
VDSS max
10
VDS (V)
100
EAS – Tch
600
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 353 μH
Wave form
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-17
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3844.PDF ] | |
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