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S2516BH の電気的特性と機能

S2516BHのメーカーはSTMicroelectronicsです、この部品の機能は「SCR」です。


製品の詳細 ( Datasheet PDF )

部品番号 S2516BH
部品説明 SCR
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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S2516BH Datasheet, S2516BH PDF,ピン配置, 機能
® S25xxxH
SCR
FEATURES
IT(RMS) = 25A
VDRM = 200V to 800V
High surge current capability
DESCRIPTION
The S25xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
K
A
G
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
IT( AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tc= 85°C
Average on-state current
(180° conduction angle)
Tc= 85°C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 100 mA diG /dt = 1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
25
16
270
250
310
100
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
Voltage
Unit
B DMN
200 400 600 800 V
January 1995
1/5

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S2516BH pdf, ピン配列
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
S25xxxH
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
25
360 O
20
DC
15 = 1 80 o
= 1 20 o
10 = 90 o
= 60o
5
= 30o
IT(AV)(A)
0
0 2 4 6 8 10 12 14 16 18 20
P (W)
25
20
15
= 180o
10
5
Tamb (oC)
0
0 20 40 60
Tcase (oC)
-70
Rth = 0 o C/W
1o C/W
2o C/W -80
4o C/W
-90
-100
-110
-120
80 100 120 140
Fig.3 : Average on-state current versus case tem-
perature.
I T(AV) (A)
30
25
DC
20
15 = 180o
10
5
o
Tcase ( C)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1 Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
30 0
25 0
20 0
15 0
10 0
50
Number of cycles
0
1 10
Tj initial = 25oC
100 100 0
3/5
®


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部品番号部品説明メーカ
S2516BH

SCR

STMicroelectronics
STMicroelectronics


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