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PDF TSM1N60S Data sheet ( Hoja de datos )
| Número de pieza | TSM1N60S | |
| Descripción | N-Channel Power Enhancement Mode MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
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TO-92
Pin Definition:
1. Gate
2. Drain
3. Source
TSM1N60S
600V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 11 @ VGS =10V
ID (A)
0.3
General Description
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast
recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
● IDSS and VDS(on) specified at elevated temperature
Block Diagram
Ordering Information
Part No.
TSM1N60SCT B0
TSM1N60SCT A3
Package
TO-92
TO-92
Packing
1Kpcs / Bulk
2Kpcs / Ammo
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
Maximum Power Dissipation @Ta = 25oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
EAS
PD
TJ
TJ, TSTG
Limit
600
±30
0.3
1.2
1
50
3
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
oC
oC
1/6 Version: A07
1 page  
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TSM1N60S
600V N-Channel Power MOSFET
TO-92 Mechanical Drawing
TO-92 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX
A 4.30
4.70 0.169 0.185
B 4.30
4.70 0.169 0.185
C 14.30(typ)
0.563(typ)
D 0.43
0.49 0.017 0.019
E 2.19
2.81 0.086 0.111
F 3.30 3.70 0.130 0.146
G 2.42
2.66 0.095 0.105
H 0.37
0.43 0.015 0.017
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6 Version: A07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM1N60S.PDF ] | |
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