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FGA25N120AN の電気的特性と機能

FGA25N120ANのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA25N120AN
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA25N120AN Datasheet, FGA25N120AN PDF,ピン配置, 機能
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FGA25N120AN
IGBT
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs
provides low conduction and switching losses. The AN
series offers an solution for application such as induction
heating (IH), motor control, general purpose inverters and
uninterruptible power supplies (UPS).
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A
• High input impedance
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
G
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FGA25N120AN
1200
± 20
40
25
75
310
125
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.4
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FGA25N120AN Rev. A

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180
T = 25
C
160
140
20V
17V
15V
12V
120
100
V = 10V
GE
80
60
40
20
0
0 2 4 6 8 10
Collector-Emitter Voltage, V [V]
CE
Fig 1. Typical Output Characteristics
4.0
Common Emitter
V = 15V
GE
3.5
40A
3.0 I = 25A
C
2.5
2.0
25
50 75 100
Case Temperature, T []
C
125
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25
C
16
12
8
4 40A
25A
I = 12.5A
C
0
0 4 8 12 16
Gate-Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. VGE
©2004 Fairchild Semiconductor Corporation
20
120
Common Emitter
V = 15V
100
GE
T = 25
C
T = 125
C
80
60
40
20
0
0246
Collector-Emitter Voltage, V [V]
CE
Fig 2. Typical Saturation Voltage Characteristics
50
Vcc = 600V
load Current : peak of square wave
40
30
20
10
Duty cycle : 50%
Tc = 100
Powe Dissipation = 60W
0
0.1 1
10
Frequency [kHz]
100
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T = 125
C
16
12
8
40A
4
25A
I = 12.5A
C
0
0 4 8 12 16
Gate-Emitter Voltage, V [V]
GE
Fig 6. Saturation Voltage vs. VGE
20
FGA25N120AN Rev. A


3Pages


FGA25N120AN 電子部品, 半導体
www.DataSheet4U.com
Package Dimension
TO-3P (FS PKG CODE)
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
1.40 ±0.20
0.60
+0.15
–0.05
©2004 Fairchild Semiconductor Corporation
Dimensions in Millimeters
FGA25N120AN Rev. A

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ページ 合計 : 7 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
FGA25N120AN

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor
FGA25N120AND

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor
FGA25N120ANTD

NPT Trench IGBT

Fairchild Semiconductor
Fairchild Semiconductor
FGA25N120ANTDTU

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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