|
|
PDF STP38N06 Data sheet ( Hoja de datos )
| Número de pieza | STP38N06 | |
| Descripción | N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP38N06 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STP38N06
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
TYPE
ST P38N06
VDSS
60 V
RDS(on)
< 0.03 Ω
ID
38 A (*)
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.026 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dV/dt(1 ) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
60
60
± 20
38
26
152
90
0.6
7
-65 to 175
175
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/11
1 page  
www.DataSheet4U.com
Capacitance Variations
STP38N06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/11
5 Page 
www.DataSheet4U.com
STP38N06
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet STP38N06.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP38N06 | N-CHANNEL ENHANCEMENT POWER MOS TRANSISTOR | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |