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Datasheet FGD2N40L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FGD2N40L | 400V N-Channel Logic Level IGBT
FGD2N40L 400V N-Channel Logic Level IGBT
March 2006
FGD2N40L
400V N-Channel Logic Level IGBT
Features
VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V 6kV ESD Protected High Peak Current Density TO-252 (D-Pak) Low VGE(TH)
General Description
This N-Channel IGBT is a MOS |  Fairchild Semiconductor | igbt |
FGD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FGD12-302 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | FGD12-502 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | FGD13-302 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | FGD13-502 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | FGD2N40L | 400V N-Channel Logic Level IGBT
FGD2N40L 400V N-Channel Logic Level IGBT
March 2006
FGD2N40L
400V N-Channel Logic Level IGBT
Features
VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V 6kV ESD Protected High Peak Current Density TO-252 (D-Pak) Low VGE(TH)
General Description
This N-Channel IGBT is a MOS Fairchild Semiconductor igbt | | |
| 6 | FGD3040G2_F085 | N-Channel Ignition IGBT FGB3040G2_F085 / FGD3040G2_F085 / FGP3040G2_F085 / FGI3040G2_F085
May 2014
FGB3040G2_F085 / FGD3040G2_F085 FGP3040G2_F085 / FGI3040G2_F085
EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Features
SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive
Applications
Automotive lgnition Fairchild Semiconductor igbt | | |
| 7 | FGD3245G2_F085 | N-Channel Ignition IGBT FGD3245G2_F085 / FGB3245G2_F085
FGD3245G2_F085 / FGB3245G2_F085
EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT
May 2014
Features
SCIS Energy = 320mJ at TJ = 25oC Logic Level Gate Drive
Low Saturation Voltage
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive lgnition Fairchild Semiconductor igbt | |
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