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GS74117AXのメーカーはGSI Technologyです、この部品の機能は「256K x 16 4Mb Asynchronous SRAM」です。 |
部品番号 | GS74117AX |
| |
部品説明 | 256K x 16 4Mb Asynchronous SRAM | ||
メーカ | GSI Technology | ||
ロゴ | |||
このページの下部にプレビューとGS74117AXダウンロード(pdfファイル)リンクがあります。 Total 12 pages
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FP-BGA
Commercial Temp
Industrial Temp
256K x 16
4Mb Asynchronous SRAM
GS74117AX
8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 130/105/95 mA at minimum
cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package:
X: 6 mm x 10 mm Fine Pitch Ball Grid Array package
GX: Pb-Free 6 mm x 10 mm Fine Pitch Ball Grid Array
package
Description
The GS74117A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS74117A is available in a 6 x 10 mm Fine
Pitch BGA package.
Pin Descriptions
Symbol
A0–A17
DQ1–DQ16
CE
LB
UB
WE
OE
VDD
VSS
NC
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
Fine Pitch BGA 256K x 16 Bump Configuration
123456
A LB OE A0 A1 A2 NC
B DQ1 UB A3 A4 CE DQ16
C DQ3 DQ2 A5 A6 DQ15 DQ14
D VSS DQ4 A17 A7 DQ13 VDD
E VDD DQ5 NC A16 DQ12 VSS
F DQ6 DQ7 A8 A9 DQ10 DQ11
G DQ8 NC A10 A11 WE DQ9
H NC A12 A13 A14 A15 NC
Package X
6 x 10 mm Bump Pitch
Top View
Rev: 1.05 12/2004
1/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
1 Page GS74117AX
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
VDD
VIN
VOUT
PD
–0.5 to +4.6
–0.5 to VDD +0.5
(≤ 4.6 V max.)
–0.5 to VDD +0.5
(≤ 4.6 V max.)
0.7
V
V
V
W
Storage temperature
TSTG
–55 to 150
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Supply Voltage for -8/-10/-12
VDD
3.0
3.3
Input High Voltage
VIH 2.0 —
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
VIL –0.3
TAc 0
TAI –40
—
—
—
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Max
3.6
VDD +0.3
0.8
70
85
Unit
V
V
V
oC
oC
Rev: 1.05 12/2004
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
3Pages GS74117AX
AC Characteristics
Read Cycle
Parameter
Symbol
Read cycle time
Address access time
Chip enable access time (CE)
Byte enable access time (UB, LB)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte enable to output in low Z (UB, LB)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
Byte disable to output in High Z (UB, LB)
* These parameters are sampled and are not 100% tested.
tRC
tAA
tAC
tAB
tOE
tOH
tLZ*
tOLZ*
tBLZ*
tHZ*
tOHZ*
tBHZ*
-8
Min Max
8—
—8
—8
— 3.5
— 3.5
3—
3—
0—
0—
—4
— 3.5
— 3.5
-10
Min Max
10 —
— 10
— 10
—4
—4
3—
3—
0—
0—
—5
—4
—4
-12
Min Max
12 —
— 12
— 12
—5
—5
3—
3—
0—
0—
—6
—5
—5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle 1: CE = OE = VIL, WE = VIH, UB and, or LB = VIL
Address
Data Out
tOH
Previous Data
tRC
tAA
Data valid
Rev: 1.05 12/2004
6/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
GS74117AX | 256K x 16 4Mb Asynchronous SRAM | GSI Technology |