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GE04N70BのメーカーはGTMです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | GE04N70B |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | GTM | ||
ロゴ | |||
このページの下部にプレビューとGE04N70Bダウンロード(pdfファイル)リンクがあります。 Total 5 pages
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/04
REVISED DATE :
GE04N70B
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
650/700V
2.4
4A
Description
The GE04N70B series are specially designed as main switching devices for universal 90~265VAC off-line
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast switching, ruggedized design and
cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Simple Drive Requirement
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
A/H VDS
Gate-Source Voltage
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current1,
Total Power Dissipation
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAR
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
650/700
20
4
2.5
15
62.5
0.5
100
4
4
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Value
2.0
62
Unit
/W
/W
1/5
1 Page www.DataSheet4U.com
Characteristics Curve
ISSUED DATE :2005/01/04
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Temperature
Fig 6. Typical Power Dissipation
3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ GE04N70B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GE04N70B | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |