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GBC338 の電気的特性と機能

GBC338のメーカーはGTMです、この部品の機能は「NPN SILICON TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 GBC338
部品説明 NPN SILICON TRANSISTOR
メーカ GTM
ロゴ GTM ロゴ 




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GBC338 Datasheet, GBC338 PDF,ピン配置, 機能
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GBC338
NPN SILICON TRANSISTOR
Description
The GBC338 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 100~630 @VCE=1V, IC=100mA
Complementary to GBC328
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
30
25
5
800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
30 - - V IC=100uA, IE=0
25 - - V IC=10mA, IB=0
BVCES
BVEBO
30 - - V IC=100uA, IE=0
5 - - V IE=10uA, IC=0
ICBO
- - 100 nA VCB=20V, IE=0
ICES
IEBO
- - 100 nA VCE=25V, VBE=0
- - 100 nA VEB=4V, IC=0
*VCE(sat)
- - 0.7 V IC=500mA, IB=50mA
*VBE(on)
*hFE1
- - 1.2 V VCE=1V, IC=300mA
100 - 630
VCE=1V, IC=100mA
*hFE2
60 -
-
VCE=1V, IC=300mA
fT - 210 - MHz VCE=5V, IC=10mA, f=100MHz
Cob - 15 - pF VCB=10V, IE=0, f=1MHz
Classification Of hFE1
Rank
A
Range
100 ~ 250
B
160 ~ 400
C
250 ~ 630
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC338
Page: 1/3

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GBC338 pdf, ピン配列
ISSUED DATE :2005/10/21
REVISED DATE :
Fig 7. Thermal Response
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC338
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部品番号部品説明メーカ
GBC337

NPN SILICON TRANSISTOR

GTM
GTM
GBC338

NPN SILICON TRANSISTOR

GTM
GTM


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