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GBC338のメーカーはGTMです、この部品の機能は「NPN SILICON TRANSISTOR」です。 |
部品番号 | GBC338 |
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部品説明 | NPN SILICON TRANSISTOR | ||
メーカ | GTM | ||
ロゴ | |||
このページの下部にプレビューとGBC338ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
www.DataSheet4U.com
GBC338
NPN SILICON TRANSISTOR
Description
The GBC338 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 100~630 @VCE=1V, IC=100mA
Complementary to GBC328
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
30
25
5
800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
30 - - V IC=100uA, IE=0
25 - - V IC=10mA, IB=0
BVCES
BVEBO
30 - - V IC=100uA, IE=0
5 - - V IE=10uA, IC=0
ICBO
- - 100 nA VCB=20V, IE=0
ICES
IEBO
- - 100 nA VCE=25V, VBE=0
- - 100 nA VEB=4V, IC=0
*VCE(sat)
- - 0.7 V IC=500mA, IB=50mA
*VBE(on)
*hFE1
- - 1.2 V VCE=1V, IC=300mA
100 - 630
VCE=1V, IC=100mA
*hFE2
60 -
-
VCE=1V, IC=300mA
fT - 210 - MHz VCE=5V, IC=10mA, f=100MHz
Cob - 15 - pF VCB=10V, IE=0, f=1MHz
Classification Of hFE1
Rank
A
Range
100 ~ 250
B
160 ~ 400
C
250 ~ 630
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC338
Page: 1/3
1 Page ISSUED DATE :2005/10/21
REVISED DATE :
Fig 7. Thermal Response
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC338
Page: 3/3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ GBC338 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GBC337 | NPN SILICON TRANSISTOR | GTM |
GBC338 | NPN SILICON TRANSISTOR | GTM |