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PDF GBC337 Data sheet ( Hoja de datos )
| Número de pieza | GBC337 | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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GBC337
NPN SILICON TRANSISTOR
Description
The GBC337 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 100~630 @VCE=1V, IC=100mA
Complementary to GBC327
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
50
45
5
800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
50 - - V IC=100uA, IE=0
45 - - V IC=10mA, IB=0
BVCES
BVEBO
50 - - V IC=100uA, IE=0
5 - - V IE=10uA, IC=0
ICBO
- - 100 nA VCB=30V, IE=0
ICES
IEBO
- - 100 nA VCE=45V, VBE=0
- - 100 nA VEB=4V, IC=0
*VCE(sat)
- - 0.7 V IC=500mA, IB=50mA
*VBE(on)
*hFE1
- - 1.2 V VCE=1V, IC=300mA
100 - 630
VCE=1V, IC=100mA
*hFE2
60 -
-
VCE=1V, IC=300mA
fT - 210 - MHz VCE=5V, IC=10mA, f=100MHz
Cob - 15 - pF VCB=10V, IE=0, f=1MHz
Classification Of hFE1
Rank
A
Range
100 ~ 250
B
160 ~ 400
C
250 ~ 630
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC337
Page: 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet GBC337.PDF ] | |
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