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PDF 2SK3112 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3112 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A)
• Low input capacitance
Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3112
TO-220AB
2SK3112-S
TO-262
2SK3112-ZJ
TO-263(MP-25ZJ)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
200
Gate to Source Voltage (VDS = 0 V) VGSS
±30
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±25
±75
Total Power Dissipation (TC = 25°C) PT1
100
Total Power Dissipation (TA = 25°C) PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
−55 to +150
25
250
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
© 1998,2001
1 page  
2SK3112
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
RDS(on) Limited
ID(DC)
Power
ID(pulse) PW
100 µs
DissipatiDonC10L3immms1itsemds
=
10
µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
TC = 25˚C
Single Pulse
0.1
1 10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3˚C/W
10
1 Rth(ch-C) = 1.25˚C/W
0.1
0.01
10 µ
100 µ
1m
10 m
100 m
1
PW - Pulse Width - sec
Single Pulse
10 100 1000
Data Sheet D13335EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3112.PDF ] | |
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