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PDF G8050S Data sheet ( Hoja de datos )
| Número de pieza | G8050S | |
| Descripción | NPN EPITAXIAL TRANSISTOR | |
| Fabricantes | GTM | |
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G8050S
CORPORATION ISSUED DATE :2004/04/22
REVISED DATE :2004/11/29B
NPN EPITAXIAL TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Description
The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
Features
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complementary to G8550S
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
VCBO
VCEO
VEBO
IC
Tj
TsTG
PD
Ratings
25
20
5
0.7
+150
-55 ~ +150
625
Unit
V
V
V
A
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
25
-
BVCEO
20
-
BVEBO 5 -
ICBO
--
IEBO
-
hFE1 100 -
hFE2
- 100
VCE(sat)
-
-
VBE(on)
-
-
fT 150 -
Cob - 10
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA,IE=0
- V IC=1mA,IB=0
- V IE=10uA,IC=0
1 uA VCB=20V, IE=0
100 nA VBE=6V,Ic=0
400 VCE=1V,IC=150mA
- VCE=1V,IC=150mA
0.5 V lC=500mA,IB=50mA
1 V VCE=1V,Ic=150mA
-
MHz
VCE=10V,Ic=20mA, ,f=100MHz
- pF VCB=10V, IE=0A,f=1MHz
Classification Of hFE1
Rank
Range
C
100-180
D
160-300
E
250-400
G8050S
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet G8050S.PDF ] | |
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