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PDF G425SD Data sheet ( Hoja de datos )
| Número de pieza | G425SD | |
| Descripción | SCHOTTKY BARRIER DIODE | |
| Fabricantes | GTM | |
| Logotipo |  |
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G425SD
S U R FAC E MO UNT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 40V, CURRENT 0. 1A
Description
The G425SD is designed for low power rectification.
Package Dimensions
1/2
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
Characteristics at Ta = 25
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
VF(1)
VF(2)
IR
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Typ.
0.55
0.34
30
Ratings
+125
-40 ~ +125
40
28
40
1.0
6.0
0.1
225
Unit
V
V
V
A
pF
A
mW
Unit Test Condition
V IF(1) = 100mA
V IF(2) = 10mA
uA VR = 10V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet G425SD.PDF ] | |
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