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PDF G2N4401 Data sheet ( Hoja de datos )
| Número de pieza | G2N4401 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
G2N4401 NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G2N4401 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4403
*High Power Dissipation: 625mW at 25
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ta = 25
Symbol
Min.
BVCBO
60
BVCEO
40
BVEBO
5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
750
*VBE(sat)2
-
*hFE1
20
*hFE2
40
*hFE3
80
*hFE4
100
*hFE5
40
fT 250
Cob -
Classification Of hFE4
Rank
Range
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
A
100-210
B
190-300
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
60
40
5
600
625
Unit
V
V
V
mA
mW
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE= 0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IB=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
G2N4401
Page: 1/2
1 page | ||
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| PDF Descargar | [ Datasheet G2N4401.PDF ] | |
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