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PDF G2N3904 Data sheet ( Hoja de datos )
| Número de pieza | G2N3904 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2003/12/12
REVISED DATE :2005/06/24C
G2N3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G2N3904 is designed for general purpose switching and amplifier applications.
Features
*Pb-free package are available
*Collector-Emitter Voltage: VCEO=40V
*Collect Dissipation: Pc (max) =625mW
*Complementary to G2N3906
Package Dimensions
D
TO-92
E
S1
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Collector to Base Voltage
Symbol
VCBO
Ratings
60
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
40
6
Collect Current(DC)
Junction Temperature
IC 200
Tj +150
Storage Temperature Range
Total Power Dissipation
TsTG
PD
-55 ~ +150
625
Unit
V
V
V
mA
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
40 -
BVEBO
6-
ICEX
--
IEBO
--
VCE(sat)1
--
VCE(sat)2
--
VBE(sat)1
650 -
VBE(sat)2
--
hFE1
40 -
hFE2
70 -
hFE3
100 -
hFE4
60 -
hFE5
30 -
fT 300 -
Cob - -
Cib - -
td - -
tr - -
tstg - -
tf - -
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA , IE=0
- V IC=1mA , IB=0
- V IE=10uA, IC=0
50 nA VCE=30V, VEB=3V
50 nA VEB=3V
200 mV IC=10mA, IB=1mA
300 mV IC=50mA, IB=5mA
850 mV IC=10mA, IB=1mA
950 mV IC=50mA, IB=5mA
- VCE=1V, IC=0.1mA
- VCE=1V, IC=1mA
300 VCE=1V, IC=10mA
- VCE=1V, IC=50mA
- VCE=1V, IC=100mA
-
MHz
VCE=20V, IE=-10mA, f=100MHz
4 pF VCB=10V, f=100KHz
8 pF VEB=0.5V, f=100KHz
35 ns VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
35 ns VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
200 ns VCC=3V, IC=10mA, IB1=-IB2=1mA
50 ns VCC=3V, IC=10mA, IB1=-IB2=1mA
G2N3904
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet G2N3904.PDF ] | |
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