(PDF) SIGC81T120R2C Datasheet

Número de pieza	SIGC81T120R2C
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor SIGC81T120R2C This chip is used for: • power module BSM 50GD120DN2 Applications: • drives C G E Chip Type SIGC81T120R2C VCE ICn 1200V 50A Die Size 9.08 X 8.98 mm2 Package Ordering Code sawn on foil Q67041- A4701-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9.08 X 8.98 mm2 8 x ( 2.6 x 1.78 ) 1.46 x 0.8 81.5 / 63.5 200 µm 150 mm 90 grd 167 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7161-M, Edition 2, 03.09.2003 1 page

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PDF SIGC81T120R2C Data sheet ( Hoja de datos )